2SD882D discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for use in output stage of 1w audio amplifier, voltage regulator, dc-dc converter and relay driver. pinning 1 = emitter2 = collector 3 = base characteristic symbol rating unit collector-base voltage vcbo 40 v collector-emitter voltage vceo 30 v emitter-base voltage vebo 5 v collector current(dc) ic 3 a collector current(pulse) ic 7 a base current(dc) ib 0.6 a total power dissipation(t c=25oc) pd 10 w total power dissipation(t a=25oc) pd 1 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 40 - - v ic=100ma collector-emitter breakdown voltage bvceo 30 - - v ic=1ma emitter-base breakdown volatge bvebo 5 - - v ie=10ma collector cutoff current icbo - - 1 ma vcb =30v emitter cutoff current iebo - - 1 ma veb=3v collector-emitter saturation voltage (1) vce(sat) - 0.3 0.5 v ic=2a, ib=0.2a base-emitter saturation voltage (1) vbe(sat) - 1 2 v ic=2a, ib=0.2a dc current gain(1) hfe1 30 150 - - ic=20ma, vce=2v hfe2 100 200 500 - ic=1a, vce=2v transition frequency ft - 90 - mhz ic=0.1a, vce=5v output capacitance cob - 45 - pf ie=0, vcb =10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank q p e range 100~200 160~320 250~500 classification of hfe2 to-126ml dimensions in inches and (millimeters) .090 (2.28) .123(3.12) .113(2.87) .084(2.14).074(1.88) .033(0.84).027(0.68) .163(4.12).153(3.87) .044(1.12).034(0.87) .060(1.52).050(1.27) .084(2.12).074(1.87) .591(15.0).551(14.0) .300(7.62).290(7.37) .148(3.75).138(3.50) .056(1.42).046(1.17) .180 (4.56) typ .146(3.70).136(3.44) .027(0.69).017(0.43) typ 1 2 3
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